Semiconductor device for passing current between a GaAs layer an

Details Semiconductor device for passing current between a GaAs layer an Semiconductor device for passing current between a GaAs layer an

1991-05-31

1992-08-11

James, Andrew J.

357 17, 357 30, 357 45, H01L 29161, H01L 29205, H01L 29225, H01L 3300

Patent

active

051384043

ABSTRACT:
A semiconductor device for passing electric current between a GaAs semiconductor layer (103) and an InGaAlP semiconductor layer (101) both having the same conductivity type. The device includes a higher carrier density region (102) with the carrier density equal to or more than 5.times.10.sup.17 cm.sup.-3 and thickness in a rannge from 400 .ANG. to 800 .ANG. in at least a part of the InGaAlP layer (101) adjoining the GaAs layer (103). As a result, good ohmic contact is achieved and the semiconductor device has a lower operating voltage and a satisfactory thermal characteristic.

REFERENCES:
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patent: 4792958 (1988-12-01), Ohba et al.
patent: 4809287 (1989-02-01), Ohba et al.
patent: 4837775 (1989-06-01), Andrews et al.

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