Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Reexamination Certificate
2005-02-01
2005-02-01
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Having graded composition
C257S190000, C257S184000, C257S185000, C257S189000
Reexamination Certificate
active
06849881
ABSTRACT:
An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers (6a) and the barrier layers (6b), arranged in front, form a supperlattice.
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Bader Stefan
Bolay Helmut
Eisert Dominik
Hahn Berthold
Harle Volker
Fish & Richardson P.C.
Flynn Nathan J.
Mandala Jr. Victor A.
Osram GmbH
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