Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-11-01
2005-11-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S018000, C257S338000, C257SE29193
Reexamination Certificate
active
06960781
ABSTRACT:
A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.
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Currie Matthew T.
Lochtefeld Anthony J.
Amberwave Systems Corporation
Goodwin & Procter LLP
Ho Tu-Tu
Nelms David
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