Sintered silicon nitride

Compositions: ceramic – Ceramic compositions – Carbide or oxycarbide containing

Reexamination Certificate

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C501S097200, C501S097400, C264S683000

Reexamination Certificate

active

06977233

ABSTRACT:
Sintered silicon nitride products comprising predominantly β-silicon nitride grains in combination with from about 0.1 to 30 mole % silicon carbide, and grain boundary secondary phases of scandium oxide and scandium disilicate. Such products have high fracture toughness, resistance to recession, and resistance to oxidation at temperatures of at least 1500° C. Methods for preparing sintered silicon nitride products are also disclosed.

REFERENCES:
patent: 3833389 (1974-09-01), Korneya et al.
patent: 4234343 (1980-11-01), Andersson
patent: 4321310 (1982-03-01), Ulion et al.
patent: 4332909 (1982-06-01), Nishida et al.
patent: 4401768 (1983-08-01), Morgan
patent: 4511402 (1985-04-01), Miura et al.
patent: 4716133 (1987-12-01), Horiuchi et al.
patent: 4870036 (1989-09-01), Yeh
patent: 5021372 (1991-06-01), Pyzik et al.
patent: 5091347 (1992-02-01), Pyzik et al.
patent: 5100847 (1992-03-01), Li et al.
patent: 5118645 (1992-06-01), Pyzik et al.
patent: 5158914 (1992-10-01), Hamazaki et al.
patent: 5160508 (1992-11-01), Pyzik et al.
patent: 5219500 (1993-06-01), Yoshida et al.
patent: 5219600 (1993-06-01), Kosegaki et al.
patent: 5236786 (1993-08-01), Newkirk et al.
patent: 5312788 (1994-05-01), Li et al.
patent: 5364608 (1994-11-01), Edler
patent: 5370832 (1994-12-01), Sugimoto et al.
patent: 5380179 (1995-01-01), Nishimura et al.
patent: 5494866 (1996-02-01), Li
patent: 5523267 (1996-06-01), Tanaka et al.
patent: 5637540 (1997-06-01), Li et al.
patent: 5691261 (1997-11-01), Takahashi et al.
patent: 5702998 (1997-12-01), Sugimoto et al.
patent: 5759933 (1998-06-01), Li et al.
patent: 5804523 (1998-09-01), Oda et al.
patent: 5846460 (1998-12-01), Matsuura et al.
patent: 5851678 (1998-12-01), Hasz et al.
patent: 5871820 (1999-02-01), Hasz et al.
patent: 5914189 (1999-06-01), Hasz et al.
patent: 6261643 (2001-07-01), Hasz et al.
patent: 2000 247748 (2000-06-01), None
Giuseppe Pezzotti and Hans-Joachim Kleebe, Effect of Residual Microstresses at Crystalline Multigrain Junctions on the Toughness of Silicon Nitride, Journal of the European Ceramic Society, Elsevier Science Publishers, Barking, Essex, GB, vol. 19, no. 4, Apr. 1999, pp. 451-455.
Meon-Jin Choi, June-Gunn Lee and Young-Wook Kim, High Temperature Strength and Oxidation Behaviour of Hot-Pressed Silicon Nitride-Disilicate Ceramics, Journal of Materials Science, Chapman and Hall Ltd., London, GB, vol. 32, no. 7, Apr. 1997, pp. 1937-1942.
PCT Internatinal Search Report PCT/US2004/022884 Dec. 6, 2004.
PCT Written Opinion Dec. 6, 2004.

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