Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Reexamination Certificate
2005-11-22
2005-11-22
Le, Que T. (Department: 2878)
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
C250S239000
Reexamination Certificate
active
06967316
ABSTRACT:
The present invention relates to a method for fabricating an image sensor including a device isolation layer having a trench structure. Particularly, an implantation process is performed twice to form two channel stop ion implantation regions in the course of forming the device isolation layer so that a cross-talk phenomenon between neighboring unit pixels is reduced and a leakage current is improved.
REFERENCES:
patent: 6184055 (2001-02-01), Yang et al.
Fujieda et al., “Dependence of Si PH Junction Perimeter Leakage on the Channel-Stop Boron Dose and Interlayer Material,”IEEE Electron Device Letters, vol. 20, No. 8, 418-420 (Aug. 1999).
Morris et al., “An Accurate and Efficient Model for Boron Implants through Thin Oxide Layers into Single-Crystal Silicon,”IEEE Transactions on Semiconductor Manufacturing 8(4,) 408-413 (Nov. 1995).
Son et al., “Blanket Tilt Implanted Shallow Trench Isolation (BTI0STI) Process for Enhanced Dram Retention Time Characteristics,” IEEE 122-124 (1999).
Walther et al., “Dopant Channeling as a Function of Implant Angle for Low Energy Applications,” IEEE 126-129 (1999).
Le Que T.
Marshall & Gerstein & Borun LLP
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