Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-08-23
2005-08-23
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185250
Reexamination Certificate
active
06934189
ABSTRACT:
A nonvolatile semiconductor memory device has a memory cell with a floating gate. The memory cell is coupled to a switching circuit such as an inverter. A series of pulses supplied to the inverter generates current spikes by alternately charging and discharging a parasitic capacitance associated with the memory cell. The current spikes are supplied from the switching circuit to the memory cell, where they inject electrons into the floating gate, thereby writing data in the memory cell without the need for a high current flow or for complex control circuitry.
REFERENCES:
patent: 4380804 (1983-04-01), Lockwood et al.
patent: 5493141 (1996-02-01), Ricco et al.
patent: 5946236 (1999-08-01), Kajitani et al.
patent: 5973956 (1999-10-01), Blyth et al.
patent: 6067253 (2000-05-01), Gotou
patent: 6069822 (2000-05-01), Canegallo et al.
patent: 07-037395 (1995-02-01), None
patent: 7-122081 (1995-05-01), None
patent: 10-228784 (1998-08-01), None
patent: 10-275480 (1998-10-01), None
patent: 10-283787 (1998-10-01), None
patent: 10-510658 (1998-10-01), None
Hoang Huan
Oki Electric Industry Co. Ltd.
Volentine Francos & Whitt PLLC
LandOfFree
Nonvolatile semiconductor memory device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3500765