Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-06-14
2005-06-14
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S050121
Reexamination Certificate
active
06907056
ABSTRACT:
Semiconductor light emitting sources are formed to have a substrate, an active region layer having one or more quantum wells, optical confinement layers surrounding the active region layer, and a p-type cladding layer and an n-type cladding layer surrounding the confinement layers and the active region layer. At least one of the optical confinement layers has a region of doping therein that is formed to provide a built-in electric field in the confinement layer that is directed to cause drift of carriers toward the active region. The electric field increases the transport speed of the injected holes or electrons, thereby reducing the non-ohmic voltage drop and increasing the overall efficiency of the light emitting source.
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Foley & Lardner LLP
Harvey Minsun Oh
Nguyen Tuan N.
Wisconsin Alumni Research Foundation
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