Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-02-08
2005-02-08
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S088000, C117S095000, C117S102000, C117S106000, C117S944000
Reexamination Certificate
active
06852160
ABSTRACT:
The present invention relates to oxides on suitable substrates, as converted from nitride precursors.
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Barnett Scott A.
Kim Ilwon
Rechner John
Sambasivan Sankar
Applied Thin Films, Inc.
Kunemund Robert
Reinhart Boerner Van Deuren s.c.
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