Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2005-06-07
2005-06-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257S586000
Reexamination Certificate
active
06903439
ABSTRACT:
By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed of single crystal, other portions such as a sidewall portion are formed of polycrystalline, and a film thickness of the sidewall portion is less than or equal to 1.5 times the film thickness of the bottom portion. In this nonselective epitaxial growth, monosilane, hydrogen, diborane, and germane are used as source gases. Then, flow rates of monosilane and hydrogen are set to 20 sccm and 20 slm respectively. Also, a growth temperature is set to 650° C., a flow rate of diborane is set to 75 sccm, and a flow rate of germane is set to 35 sccm.
REFERENCES:
patent: 6482710 (2002-11-01), Oda et al.
Patent Abstracts of Japan, Publication No. 5-062991, dated Mar. 12, 1993.
Patent Abstracts of Japan, Publication No. 10-125691, dated May. 15, 1998.
Patent Abstracts of Japan, Publication No. 11-126781, dated May. 11, 1999.
Sato Hidekazu
Wakabayashi Toshihiro
Fujitsu Limited
Ho Tu-Tu
Nelms David
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