Semiconductor device including p-channel type transistor,...

Details Semiconductor device including p-channel type transistor,... Semiconductor device including p-channel type transistor,...

2005-11-29

2005-11-29

Nguyen, Ha (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S288000

Reexamination Certificate

active

06969876

ABSTRACT:
In a semiconductor device including at least one p-channel type MOS transistor, a silicon dioxide layer is formed on a silicon substrate, and a gate electrode is formed on the silicon dioxide layer. The gate electrode silicon has a three-layered structure including a silicon-seed layer formed on the silicon dioxide layer, a silicon/germanium layer formed on the silicon-seed layer, and a polycrystalline silicon layer on the silicon/germanium layer. An average grain size of polycrystalline silicon in the polycrystalline silicon layer is at most 100 nm, and p-type impurities are substantially uniformly distributed in the gate electrode along a height thereof, and the germanium atoms are diffused from the silicon/germanium layer into the silicon-seed layer at high density.

REFERENCES:
patent: 2001-284283 (2001-10-01), None
patent: 2002-043566 (2002-02-01), None
patent: 2002-305256 (2002-10-01), None

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