Ferroelectric memory, method of fabricating the same,...

Details Ferroelectric memory, method of fabricating the same,... Ferroelectric memory, method of fabricating the same,...

2005-08-02

2005-08-02

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S257000, C438S258000, C438S593000

Reexamination Certificate

active

06924155

ABSTRACT:
A method of manufacturing a ferroelectric memory of the present invention includes applying pulsed laser light70to a ferroelectric capacitor105from above the ferroelectric capacitor in a state in which at least the ferroelectric capacitor105is formed over a substrate10.

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U.S. Appl. No. 10/397,431, filed Mar. 27, 2003, Sawasaki.
U.S. Appl. No. 10/397,315, filed Mar. 27, 2003, Sawasaki.

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