Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-06-14
2005-06-14
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S706000, C257S711000, C257S712000, C257S713000, C257S780000, C257S784000, C257S787000, C257S737000, C257S738000
Reexamination Certificate
active
06906414
ABSTRACT:
Electrically, mechanically, and thermally enhanced ball grid array (BGA) packages are described. An IC die is mounted in a centrally located cavity of a substantially planar first surface of a stiffener. The first surface of a substrate is attached to a substantially planar second surface of the stiffener. The second surface of the stiffener is opposed to the first surface of the stiffener. A centrally located protruding portion on the second surface of the stiffener is opposed to the centrally located cavity. The protruding portion extends through an opening in the substrate. A wire bond is coupled from a bond pad of the IC die to a contact pad on the first surface of the substrate through a through-pattern in the stiffener. The through-pattern in the stiffener is one of an opening through the stiffener, a recessed portion in an edge of the stiffener, a notch in an edge of the recessed portion, and a notch in an edge of the opening.
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Khan Reza-ur Rahman
Zhao Sam Ziqun
Broadcom Corporation
Parekh Nitin
Sterne Kessler Goldstein & Fox PLLC
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