Methods of forming silicon nitride spacers, and methods of...

Details Methods of forming silicon nitride spacers, and methods of... Methods of forming silicon nitride spacers, and methods of...

2005-11-22

2005-11-22

Olsen, Allan (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S724000, C438S744000, C216S067000, C216S069000, C138S097000, C138S027000

Reexamination Certificate

active

06967170

ABSTRACT:
The invention includes a method of patterning a material over a semiconductive substrate, comprising: a) forming a layer of first material against a second material and over the substrate, the substrate comprising a surface having a center and an edge; b) first etching the first material in a reaction chamber, the first etching comprising a first center-to-edge uniformity across the surface of the wafer and comprising a first selectivity for the first material relative to the second material; c) second etching the first material in the reaction chamber, the second etching comprising a second selectivity for the first material relative to the second material, the second center-to-edge uniformity being less than the first center-to-edge uniformity, the second selectivity being greater than the first selectivity; and d) cleaning a component of the first material from at least one sidewall of the reaction chamber between the first and second etchings.

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