Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-12-13
2005-12-13
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S086000, C257S087000, C257S094000, C257S103000
Reexamination Certificate
active
06974974
ABSTRACT:
A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.
REFERENCES:
patent: 5036022 (1991-07-01), Kuech et al.
patent: 5253264 (1993-10-01), Suzuki et al.
patent: 6207973 (2001-03-01), Sato et al.
patent: 6-37355 (1994-02-01), None
patent: 6275914 (1994-09-01), None
patent: 6334168 (1994-12-01), None
patent: 7154023 (1995-06-01), None
patent: 7193327 (1995-07-01), None
patent: 8195522 (1996-07-01), None
patent: 9237942 (1997-09-01), None
patent: 9283857 (1997-10-01), None
patent: 10074979 (1998-03-01), None
patent: 10126004 (1998-05-01), None
patent: 10126005 (1998-05-01), None
Jikutani Naoto
Sato Shun'ichi
Takahashi Takashi
Cooper & Dunham LLP
Louie Wai-Sing
Pham Long
Ricoh & Company, Ltd.
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