Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Reexamination Certificate
2005-08-30
2005-08-30
Porta, David (Department: 2878)
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
C438S022000, C438S048000
Reexamination Certificate
active
06936808
ABSTRACT:
The semiconductor device of the present invention comprises an optical transmission region, and a light receiving part for converting light propagating through the optical transmission region to an electrical signal, wherein the optical transmission region comprises a two-dimensional optical waveguide layer, and wherein at least a portion of the light receiving part is embedded in the optical transmission region, whereby the present invention can provide a semiconductor device having reduced direction dependency when light propagating through the optical transmission region is received.
REFERENCES:
patent: 5191219 (1993-03-01), Linke
patent: 5712504 (1998-01-01), Yano et al.
patent: 5737458 (1998-04-01), Wojnarowski et al.
patent: 5757989 (1998-05-01), Yoshimura et al.
patent: 5835646 (1998-11-01), Yoshimura et al.
patent: 5955776 (1999-09-01), Ishikawa
patent: 6097472 (2000-08-01), Tanaka et al.
patent: 6204545 (2001-03-01), Nakata
patent: 6324904 (2001-12-01), Ishikawa et al.
patent: 6343171 (2002-01-01), Yoshimura et al.
patent: 6499889 (2002-12-01), Shirakawa et al.
patent: 6516104 (2003-02-01), Furuyama
patent: 6611000 (2003-08-01), Tamura et al.
patent: 2001/0032984 (2001-10-01), Uchida
patent: 2002/0167013 (2002-11-01), Iwasaki et al.
patent: 0 974 913 (2000-01-01), None
patent: 1 139 122 (2001-10-01), None
patent: 58-225746 (1983-12-01), None
patent: 59-75656 (1984-04-01), None
patent: 61-28240 (1986-02-01), None
patent: 8-220357 (1996-08-01), None
patent: 9-96746 (1997-04-01), None
patent: 9-270751 (1997-10-01), None
patent: 10-294254 (1998-11-01), None
patent: 11-54406 (1999-02-01), None
patent: 11-72750 (1999-03-01), None
patent: 11-111609 (1999-04-01), None
patent: 11-196069 (1999-07-01), None
patent: 2000-31189 (2000-01-01), None
patent: 2000-31190 (2000-01-01), None
patent: 2000-235127 (2000-08-01), None
patent: 2000-337872 (2000-12-01), None
patent: 2001-280973 (2001-10-01), None
patent: 2001-284635 (2001-10-01), None
“BALL Semiconductor Archieves Experimental Breakthrough for Building Electronic Devices Sphere”, PR Newswire Page, Jun. 25, 1998, XP-002934951, pp. 1-3.
L. Balliet, et al., “Optical Transmission System for Interconnecting Electronic Units”, IBM Technical Disclosure Bulletin, vol. 26, No. 4, Sep. 1983, pp. 1793-1796.
“GaN FETs For Microwave and High-temperature Applications”, Steven C. Binari, K. Doverspike, G. Elner, H.B.Dietrich and A.E. Wickenden. Naval Research Laboratory, Washington, DC 20375-5320, USA.
“High-temperature Reliability of GaN Metal Semiconductor Field-Effect Transistor and Bipolar Junction Transistor” Seikoh Yoshida and Joe Suzuki, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2-4-3, Okano, Nishi-ku, Yokohama, 220 Japan.
Canon Kabushiki Kaisha
Fitzpatrick, Cella, Harper and Scinto
Lee Patrick J.
Porta David
LandOfFree
Semiconductor device, optoelectronic board, and production... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, optoelectronic board, and production..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, optoelectronic board, and production... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3491386