Long wavelength vertical cavity surface emitting laser

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C372S044010, C372S068000, C372S103000

Reexamination Certificate

active

06931042

ABSTRACT:
Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al0.94Ga0.06As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55° C.

REFERENCES:
patent: 4908686 (1990-03-01), Maserjian
patent: 5424559 (1995-06-01), Kasahara
patent: 5557627 (1996-09-01), Schneider, Jr. et al.
patent: 5719894 (1998-02-01), Jewell et al.
patent: 5719895 (1998-02-01), Jewell et al.
patent: 5805624 (1998-09-01), Yang et al.
patent: 5825796 (1998-10-01), Jewell et al.
patent: 5903589 (1999-05-01), Jewell
patent: 5912913 (1999-06-01), Kondow et al.
patent: 5936266 (1999-08-01), Holonyak, Jr. et al.
patent: 5956363 (1999-09-01), Lebby et al.
patent: 5960018 (1999-09-01), Jewell et al.
patent: 6014395 (2000-01-01), Jewell
patent: 6052398 (2000-04-01), Brillouet et al.
patent: 6150604 (2000-11-01), Freundlich et al.
patent: 0 822 630 (1998-02-01), None
patent: 0 822 630 (1998-04-01), None
patent: HEI 5-297128 (1995-06-01), None
patent: WO 98/07218 (1998-02-01), None
J. Boucart et al., 1-m W CW-RT Monolithic VCSEL at 1.55 μm, IEEE Photonics Technology Letters, Jun. 1999, pp. 629-631, vol. II, No. 6.
Shiro Sakai et al., Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron, Jpn. J. Appl. Phys., Oct. 1993, pp. 4413-4416, vol. 32 Part 1, No. 10.
M. C. Larson et al., GaInNAs-GaAs Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes, IEEE Photonics Technology Letters, Feb. 1998, pp. 188-190, vol. 10, No. 2.
Masahiko Kondow et al., Gas-Source Molecular Beam Epitaxy of GaNxAs1−xUsing a N Radical as the N Source, Jpn. J. Appl. Phys., Aug. 1994, pp. 1056-1058, vol. 33, Part 2, No. 8A.
Masahiko Kondow et al., Room-Temperature Pulsed Operation of GaInN As Laser Diodes with Excellent High-Temperature Performance, Jpn J. Appl. Phys., Nov. 1996 pp. 5711-5713, vol. 35, Part 1, No. 11.
K.L.Lear, A. Mar, K.D. Choquette, S.P. Kilcoyne, R.P. Schneider, Jr., and K.M. Geib, “High-Frequency Modulation of Oxide Confined Vertical Cavity Surface Emitting Lasers,”Electronics Letters,vol. 32, pp. 457-458, Feb. 29, 1996.
N. Ohnoki, F. Koyama and K. Iga, “Super-Lattice AIAs/AIInAs for Lateral-Oxide Current Confinement in InP-Based Lasers,”Journal of Crystal Growth, vol. 195, pp. 603-608, 1998.
Lear K L et al. “High-frequency modulation of oxide-confined vertical cavity surface emitting lasers” Electronics Letter, IEE Stevenage, GB, vol. 32, No. 5, 29 Feb. 1996, pp. 457-458.
Ohnoki N et al. “Super-lattice A1As/A1InAs for lateral-oxide current confinement in InP-based lasers” Journal of Crystal Growth, North-Holland Publishing Co. Amsterdam, NL, vol. 195, No. 1-4, Dec. 15, 1998, pp. 603-608.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Long wavelength vertical cavity surface emitting laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Long wavelength vertical cavity surface emitting laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Long wavelength vertical cavity surface emitting laser will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3490266

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.