Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-10-18
2005-10-18
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S048000
Reexamination Certificate
active
06955927
ABSTRACT:
It is an object of the present invention to control the crystal orientation of a ferroelectric thin film as dictated by the application of a ferroelectric thin film device. To accomplished the stated object, a bottom electrode containing at least iridium is formed over a surface preparation layer whose main component is zirconium oxide, and an ultra-thin titanium layer is laminated over the bottom electrode. An amorphous layer containing the elemental metal and elemental oxygen that constitute the ferroelectric is formed over the titanium layer, and a crystallized ferroelectric thin film is formed by heat treating this amorphous layer. If the thickness of the titanium layer is kept between 2 nm and 10 nm in the lamination thereof, the ferroelectric thin film will have a priority orientation of (100), and if it is kept between 10 nm and 20 nm, the ferroelectric thin film will have a priority orientation of (111).
REFERENCES:
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5576564 (1996-11-01), Satoh et al.
patent: 5696394 (1997-12-01), Jones, Jr. et al.
patent: 5802686 (1998-09-01), Shimada et al.
patent: 5814849 (1998-09-01), Azuma et al.
patent: 5933167 (1999-08-01), Shimada et al.
patent: 5998236 (1999-12-01), Roeder et al.
patent: 6208400 (2001-03-01), Kameyama et al.
patent: 6239462 (2001-05-01), Nakao et al.
patent: 6246156 (2001-06-01), Takeuchi et al.
patent: 6278146 (2001-08-01), Nakamura
patent: 6294860 (2001-09-01), Shimada et al.
patent: 6333537 (2001-12-01), Arita
patent: 6337238 (2002-01-01), Nakabayashi
patent: 6360606 (2002-03-01), Hirota et al.
patent: 6399521 (2002-06-01), Zhang et al.
patent: 6414975 (2002-07-01), Ishibashi et al.
patent: 2002/0080213 (2002-06-01), Shimada et al.
patent: 0 698 490 (1996-02-01), None
patent: 0 736 385 (1996-10-01), None
patent: 0 785 579 (1997-07-01), None
patent: 0 797 244 (1997-09-01), None
patent: 0 821 415 (1998-01-01), None
patent: 0 867 952 (1998-09-01), None
patent: 0 886 328 (1998-12-01), None
patent: 5-281500 (1993-10-01), None
patent: 6-112504 (1994-04-01), None
patent: 7 245236 (1995-09-01), None
patent: 7-245237 (1995-09-01), None
patent: 7-245287 (1995-09-01), None
patent: 8-58088 (1996-03-01), None
patent: 8-112896 (1996-05-01), None
patent: 8-335676 (1996-12-01), None
patent: 9-260516 (1997-10-01), None
patent: 9-280947 (1997-10-01), None
Iwao Kunishima, Hisami Okuwada, Abstract, “Current Leakage Mechanism of PZT Capacitor on IR Electrode Microelectronics Engineering Laboratory” 59thScientific Lecture on Applied Physics, p. 450 (including English Translation).
Nguyen Tuan H.
Seiko Epson Corporation
Sterne Kessler Goldstein and Fox P.L.L.C.
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