Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-08-02

2005-08-02

Kielin, Erik J. (Department: 2813)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C438S130000, C438S131000, C438S467000, C438S720000, C438S798000, C438S799000, C438S601000

Reexamination Certificate

active

06924176

ABSTRACT:
A conductive layer which is formed on an insulative layer on a semiconductor substrate is connected to the semiconductor substrate via a through portion which passes through the insulative layer and reaches the semiconductor substrate. In a state where the conductive layer is electrically connected to the semiconductor substrate via the through portion, a patterning process using a plasma etching is performed on the conductive layer, thereby forming a conductive path. After the formation of the conductive path, a heating process is performed on the substrate or the conductive path in order to disconnect the electrical connection between the through portion and the substrate by a reaction between the through portion and the semiconductor substrate which is in contact therewith.

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Merriam Webster's Collegiate Dictionary (2001), Merriam Webster Inc.; Tenth Edition, p. 969.

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