Method and system for erasing a nitride memory device

Details Method and system for erasing a nitride memory device Method and system for erasing a nitride memory device

2005-06-14

2005-06-14

Weiss, Howard (Department: 2814)

Static information storage and retrieval

Floating gate

Particular biasing

C365S218000

Reexamination Certificate

active

06906959

ABSTRACT:
The present invention is a method and system for erasing a nitride memory device. In one embodiment of the present invention, an isolated P-well is formed in a semiconductor substrate. A plurality of N-type impurity concentrations are formed in the isolated P-well and a nitride memory cell is fabricated between two of the N-type impurity concentrations. Finally, an electrical contact is coupled to the isolated P-well.

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