Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-06-28

2005-06-28

Ngo, Huyen (Department: 2871)

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

C349S042000, C438S161000, C257S066000

Reexamination Certificate

active

06912019

ABSTRACT:
A method of making a semiconductor device, including the steps of forming, upon a substrate, a semiconductor film, an insulating film, and a conductive film. Part of the upper surface of the conductive film is covered with a resist pattern so that the semiconductor film protrudes from the edges of the resist pattern. Then, the conductive film is etched using the resist pattern as a mask to leave a patterned conductive film, whereby side wall additives of reaction byproducts are generated. Next, the insulating film is etched using the patterned conductive film and side wall additives as a mask, and the side wall additives are removed. Then, impurities are implanted in the semiconductor film using the patterned conductive film as a mask so that impurities transmit through the insulating film, which expose on both sides of the patterned conductive film after removing the side wall additives. Finally, the resist pattern is removed.

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