Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2005-02-01

2005-02-01

Kielin, Erik J. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000

Reexamination Certificate

active

06849521

ABSTRACT:
In a semiconductor layer formed on a first insulating film is formed an element isolation groove extending to the first insulating film. Thereafter, a second insulating film is deposited in the element isolation groove by using a vapor deposition method.

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European Search Report Dec. 6, 2001, Application No. 01120911.1-1524.

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