Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2005-11-08
2005-11-08
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S085000, C257S091000, C257S098000
Reexamination Certificate
active
06963086
ABSTRACT:
Disclosed are a semiconductor light emitting device capable of enhancing a light emergence efficiency at a lower light emergence plane of the device by forming an electrode on a halfway area of a tilt crystal plane and a fabrication method thereof. According to this light emitting device, since light emitted by a light emitting region can be efficiently, totally reflected and a current can be injected only in a good crystalline region for the reason that the halfway area, on which the electrode is formed, of the tilt crystal plane is better in crystallinity than other regions of the tilt crystal plane, it is possible to enhance both a light emergence efficiency and a luminous efficiency, and hence to enhance the light emergence efficiency by an input current.According to an image display system and an illuminating system, each of which includes an array of the semiconductor light emitting devices of the present invention, and fabrication methods thereof, since the light emitting devices each of which is capable of exhibiting a high luminous efficiency by an input current are arrayed on a substrate on the system, it is possible to provide an image display system capable of reducing a density of a current to each device and displaying a high quality image, and an illuminating system capable of ensuring high brightness.
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Hu Shouxiang
Sony Corporation
Wolf Greenfield & Sacks P.C.
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