Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-06-14
2005-06-14
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000, C257SE29275
Reexamination Certificate
active
06906344
ABSTRACT:
An object of the present invention is to provide a technique for improving characteristics of a TFT and realizing the structure of the TFT optimal for driving conditions of a pixel section and a driving circuit, using a smaller number of photo masks. A semiconductor device has a semiconductor film, a first electrode, and a first insulating film sandwiched between the semiconductor film and the first electrode, and further has a second electrode, and a second insulating film sandwiched between the semiconductor film and the second electrode. The first electrode and the second electrode overlap with each other across a channel-formed region which the semiconductor film has. A constant voltage is applied to the first electrode at any time.
REFERENCES:
patent: 5580802 (1996-12-01), Mayer et al.
patent: 5834797 (1998-11-01), Yamanaka
patent: 5955765 (1999-09-01), Yamazaki et al.
patent: 6034748 (2000-03-01), Furuta
patent: 6252248 (2001-06-01), Sano et al.
patent: 6327006 (2001-12-01), Sato et al.
patent: 6504593 (2003-01-01), Noritake et al.
patent: 6534788 (2003-03-01), Yeo et al.
patent: 1081676 (2001-03-01), None
patent: 63-208896 (1988-08-01), None
patent: 08-078329 (1996-03-01), None
patent: 2666293 (1997-06-01), None
patent: 2666293 (1997-10-01), None
patent: 2737780 (1998-01-01), None
patent: 2737780 (1998-04-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 11-354802 (1999-12-01), None
patent: 3141860 (2000-12-01), None
patent: 3141860 (2001-03-01), None
Osada Mai
Yamazaki Shunpei
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Smoot Stephen W.
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