Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-02-15

2005-02-15

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000

Reexamination Certificate

active

06856020

ABSTRACT:
A plurality of metal interconnections are formed on a semiconductor substrate. The semiconductor substrate is held on a sample stage in a reactor chamber of a plasma processing apparatus and a material gas containing C5F8, C3F6, or C4F6as a main component is introduced into the reactor chamber, so that a first fluorine-containing organic film having cavities at positions between the metal interconnections is deposited between the metal interconnections and on the top surfaces of the metal interconnections.

REFERENCES:
patent: 5721285 (1998-02-01), Nakamoto et al.
patent: 5861674 (1999-01-01), Ishikawa
patent: 6157083 (2000-12-01), Usami et al.
patent: 6316349 (2001-11-01), Kim et al.
patent: 6323555 (2001-11-01), Maex et al.
patent: 6518169 (2003-02-01), Jiwari et al.
patent: 233448 (1998-09-01), None
patent: 10-233448 (1998-09-01), None

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