Method for forming a field oxide layer

Details Method for forming a field oxide layer Method for forming a field oxide layer

1991-03-05

1992-02-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 61, 437 62, 437228, 437238, 437 56, 437981, H01L 21302

Patent

active

050860127

ABSTRACT:
A method for forming a field oxide layer in an integrated semiconductor device is disclosed. A first oxide layer and a first photoresist layer is sequentially deposited on a silicon substrate. A first separation mask pattern is then formed by removing a portion of the first photoresist layer to expose a portion of the first oxide layer, such that a plurality of separation regions is defined at the silicon substrate. An ion-implantation process is performed through the exposed first oxide layer into a portion of the silicon substrate positioned at the defined separation regions utilizing the first separation mask pattern. The first photoresist layer remaining on the first oxide layer is removed to expose the entire surface of the first oxide layer. A second oxide layer and a second photoresist layer is sequentially deposited on the entire surface of the first oxide layer. A second separation mask pattern is formed by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions to expose a portion of the second oxide layer. A plurality of field oxide layers is formed at the defined separation regions by sequentially removing the exposed portion of the second oxide layer and the first oxide layer thereunder utilizing the second separation mask pattern. The remaining second photoresist layer is removed to expose the plurality of field oxide layer.

REFERENCES:
patent: 4775644 (1988-10-01), Szeto
patent: 4885261 (1989-12-01), Yoshikawa

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