Isolation of layered P-N junctions by diffusion to semi-insulati

Details Isolation of layered P-N junctions by diffusion to semi-insulati Isolation of layered P-N junctions by diffusion to semi-insulati

1990-06-01

1992-02-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 23, 437 24, 437 63, H01L 2176, H01L 21265

Patent

active

050860046

ABSTRACT:
An isolation structure and method of fabrication thereof for use in isolation of p-n junctions and for use in multiplexed, multi-color LED arrays. The isolation structure is fabricated on a structure which has a p-n junction formed on a semi-insulating substrate by (1) diffusing dopants into predetermined regions thereof from the top of the structure to the semi-insulating substrate, the dopants being of the same dopant type as that contained in the top layer of the p-n junction and (2) ion-implanting predetermined regions of the top layer of the p-n junction to render them non-conductive.

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