Organosilicate polymer and insulating film therefrom

Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – From silicon reactant having at least one...

Reexamination Certificate

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C556S450000, C438S678000

Reexamination Certificate

active

06933360

ABSTRACT:
The present invention relates to a low dielectric substance essential for a next generating electrical device such as a semiconductor device having high performance and high density, and particularly to a process for preparing a low dielectric organosilicate polymer, a hydrolysis condensation product of a carbon-bridged oligomer; a process for manufacturing an insulating film using an organosilicate polymer prepared by the process; and an electrical device comprising an insulating film prepared by the process. The organosilicate polymer prepared according the process of the present invention is thermally stable, and has good film-forming prosperities, excellent mechanical strength and crack resistance, and the film manufactured therefrom has excellent insulating properties, film uniformity, dielectric properties, crack resistance, and mechanical strength.

REFERENCES:
patent: 5302734 (1994-04-01), Jung et al.
patent: 591149 (1947-08-01), None
Brondani et al., A New Trialkoxysilation Reaction, the Cross-Coupling of (Tri-Isopropyloxysilyl)Methyl Grignard Reagent with Organic Halides, Journal of Organometallic Chemistry, 451 (1993) C1-C3.
Brondani et al., Polyfunctional Carbosilanes and Organosilicon Compounds. Synthesis via Grignard Reactions, Tetrahedron Letters, vol. 34, No. 13, pp. 2111-2114, 1993.
Corriu et al., New Mixed Organic- Inorganic Polymers: Hydrolysis and Polycondensation of Bis(trimethoxysilyl)organometallic Precursors, Mater. Chem. 1992, 4, 1217-1224.
Corriu et al., Polysilsesquioxanes Materials Containing a Dienic Unit: Unexpected Reactivity of the Organic Unit, J. Mater. Chem. 2000, 4, 1113-1120.
Brondani et al, In: Tetrahedron Letters, Mar. 26, 1993, vol. 34 (13), p. 2111-4.

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