System for controlling ion implantation dosage in electronic mat

Details System for controlling ion implantation dosage in electronic mat System for controlling ion implantation dosage in electronic mat

1975-01-02

1977-05-03

Smith, Alfred E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

G01N 2300

Patent

active

040216756

ABSTRACT:
Disclosed is an ion implantation process control system wherein the ion dosage in semiconductor wafers is continuously controlled. This control is achieved by controllably and incrementally integrating the ion beam current to provide a control signal, and then utilizing this control signal to provide controlled relative movement between the ion beam and the surface area upon which it fails.

REFERENCES:
patent: 3308264 (1967-03-01), Ullery
patent: 3330696 (1967-07-01), Ullery et al.
patent: 3388009 (1968-07-01), King
patent: 3651303 (1972-03-01), Rehme
patent: 3689766 (1972-09-01), Freeman
patent: 3778626 (1973-12-01), Robertson

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