Positive resist composition and patterning process

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S192000, C430S193000, C430S313000, C430S324000, C430S326000

Reexamination Certificate

active

06911292

ABSTRACT:
A positive resist composition contains a novolak resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl ester groups, a methyl vinyl ether-monoalkyl maleate copolymer and optionally, an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate. The composition is useful as a thick film photoresist which is subject to a plating step and offers many advantages including high sensitivity, perpendicular geometry, high resolution, and crack resistance during and after the plating step.

REFERENCES:
patent: 3634082 (1972-01-01), Christensen
patent: 4308368 (1981-12-01), Kubo et al.
patent: 5338643 (1994-08-01), Kanazawa et al.
patent: 5422221 (1995-06-01), Okazaki et al.
patent: 5942369 (1999-08-01), Ota et al.
patent: 6218069 (2001-04-01), Kato et al.
patent: 588492 (1994-03-01), None
patent: 6-202332 (1994-07-01), None
patent: 10-207057 (1998-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Positive resist composition and patterning process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Positive resist composition and patterning process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Positive resist composition and patterning process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3474095

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.