Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2005-06-28
2005-06-28
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S685000, C257S686000, C257S786000, C257S723000, C257S696000, C257S777000, C257S684000, C257S690000, C257S700000, C257S709000, C257S731000, C257S736000, C257S776000, C438S106000
Reexamination Certificate
active
06911721
ABSTRACT:
A semiconductor device includes a base substrate provided with a base wiring. A first substrate includes a first wiring to be electrically connected to the base wiring and is provided above the base substrate. A first semiconductor element includes a first electrode to be electrically connected to the first wiring and is provided between the base substrate and the first substrate. A second substrate includes a second wiring to be electrically connected to the base wiring and is provided above the first substrate. A second semiconductor element includes a second electrode to be electrically connected to the second wiring and is provided between the first substrate and the second substrate and above the first semiconductor element. The first substrate has a first region where the first semiconductor element is provided below, a second region where a portion of the first wiring that connects to the base wiring is located, and a first bent section between the first region and the second region. The second substrate has a third region where the second semiconductor element is provided below, a fourth region where a portion of the second wiring that connects to the base wiring is located, and a second bent section between the third region and the fourth region.
REFERENCES:
patent: 5229960 (1993-07-01), De Givry
patent: 6084294 (2000-07-01), Tomita
patent: 6383840 (2002-05-01), Hashimoto
patent: 6462412 (2002-10-01), Kamei et al.
Im Junghwa
Lee Eddie
Seiko Epson Corporation
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