Image sensor and method for fabricating the same

Details Image sensor and method for fabricating the same Image sensor and method for fabricating the same

2005-12-27

2005-12-27

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S451000, C257S292000, C257S446000

Reexamination Certificate

active

06979587

ABSTRACT:
The present invention provides an image sensor capable of suppressing the dark current due to crystalline defects occurring at an edge of a field oxide layer and a method for fabricating the same. The present invention provides an image sensor including: a semiconductor substrate; an active area including a photodiode area formed in a predetermined position of the substrate, a floating diffusion area having a smaller area than the photodiode area and a channel area having a bottle-neck structure connecting to the photodiode area and the floating diffusion area; a field area for isolating electrically the active area; a field stop layer being formed beneath the field area by having a wider area than the field area through an expansion towards the active area with a first width; and a gate electrode formed on the substrate by covering the channel area and having one side superposed with a second width on one entire side of the photodiode contacted to the channel area.

REFERENCES:
patent: 6417023 (2002-07-01), Suzuki et al.
patent: 6528342 (2003-03-01), Miyagawa et al.
patent: 2002/0117699 (2002-08-01), Francois
patent: 2002-0001635 (2002-09-01), None
Son, Jeong-Hwan et al, IEEE, 1999, pp. 122-124.
Yonemoto, Kazuya et al, IEEE, 12/2000, vol. 35, No. 12, pp. 2038-2043.
Blanksby, Andrew J., IEEE, 1/2000, vol. 47, No. 1, pp. 55-64.

Affiliated with

Also associated with

Rating

Image sensor and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3473419