Method of repairing a mask

Details Method of repairing a mask Method of repairing a mask

1990-08-13

1992-02-04

Schilling, Richard L.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430323, 2504922, 250398, 156646, 156DIG111, 359 29, G03F 900

Patent

active

050859579

ABSTRACT:
A mask repair method in which a transparent defect of in a phase shifter pattern is repaired by ion beam etching instead of a shifter pattern film deposition. A portion of the mask substrate below the transparent defect region is etched with an ion beam to a depth such that the phase of light passing through the adjacent transparent pattern regions and the phase of light passing through the etched region are opposite to each other. This mask repairing method enables high-contrast exposure and ensures high working accuracy since the repairing process is based on etching alone.

REFERENCES:
patent: 4037918 (1977-07-01), Kato
patent: 4457803 (1984-07-01), Takigawa
patent: 4548883 (1985-10-01), Wagner
patent: 4698236 (1987-10-01), Kellogg et al.
patent: 4874460 (1989-10-01), Nakagawa et al.
patent: 4902899 (1990-02-01), Lin et al.
patent: 4930439 (1990-06-01), Sato et al.
patent: 4939364 (1990-07-01), Ishitani et al.
Levenson, Mark D. et al., IEEE Transactions on Electronic Devices, vol. ED-29, No. 12, Dec. 1982, "Improving Resolution in Photolithography with a Phase-Shifting Mask".

Affiliated with

Also associated with

Rating

Method of repairing a mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of repairing a mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of repairing a mask will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-347328