Methods for transferring a useful layer of silicon carbide...

Details Methods for transferring a useful layer of silicon carbide... Methods for transferring a useful layer of silicon carbide...

2005-12-13

2005-12-13

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S464000, C438S463000

Reexamination Certificate

active

06974760

ABSTRACT:
Methods for transferring a useful layer of silicon carbide to a receiving substrate are described. In an embodiment, the technique includes implanting at least H+ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D chosen to form an optimal weakened zone near a mean implantation depth, the optimal weakened zone defining the useful layer and a remainder portion of the source substrate. The method also includes bonding the front face of the source substrate to a contact face of the receiving substrate, and detaching the useful layer from the remainder portion of the source substrate along the weakened zone while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment. Such a method facilitates recycling the remainder portion of the source substrate.

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