Non-volatile static random access memory

Details Non-volatile static random access memory Non-volatile static random access memory

2005-11-15

2005-11-15

Ho, Hoai (Department: 2818)

Static information storage and retrieval

Floating gate

Particular connection

C365S185140, C365S185260, C365S185270, C365S185280, C365S154000

Reexamination Certificate

active

06965524

ABSTRACT:
In accordance with the present invention, a memory cell includes a non-volatile device and a SRAM cell. The SRAM cell includes first and second MOS transistors. The non-volatile device is a load to the SRAM cell. The memory cell may be adapted to operate differentially if a second SRAM cell and a second non-volatile device is disposed therein. If so adapted, the SRAM cells and/or the non-volatile devices when programmed store and supply complementary data. The non-volatile devices are erased prior to being programmed. Programming of the non-volatile devices may be done via hot-electron injection or Fowler-Nordheim tunneling. When a power failure occurs, the data stored in the SRAM are loaded in the non-volatile devices. After the power is restored, the data stored in the non-volatile devices are restored in the SRAM cells. The differential reading and wring of data reduces over-erase of the non-volatile devices.

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