Semiconductor device having a buffer layer against stress

Details Semiconductor device having a buffer layer against stress Semiconductor device having a buffer layer against stress

2005-02-08

2005-02-08

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S059000, C257S064000, C257S066000, C257S068000, C257S359000, C257S528000, C257S534000, C257S535000, C257S903000, C257S906000, C257S908000, C257S924000

Reexamination Certificate

active

06853052

ABSTRACT:
A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor and a holding capacitance with three or more capacitance electrodes is provided. Before forming the source electrode and the drain electrode, a crystalline silicon film for relaxing the stress is formed, then a contact hole connecting to the semiconductor film of the thin film transistor is opened, and a metal film to be the source electrode and the drain electrode is formed.

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English abstract of Japanese Patent Application No. JP 7-074247.

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