Static random access memory device having decreased...

Details Static random access memory device having decreased... Static random access memory device having decreased...

2005-08-02

2005-08-02

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240, C365S185180, C365S185020, C365S226000

Reexamination Certificate

active

06925010

ABSTRACT:
A static random access memory (SRAM) device and a method of manufacturing the same. In one embodiment, the SRAM device includes: (1) a first bias voltage contact biasable to a first potential, (2) a second bias voltage contact biasable to a second potential that differs from the first potential and (3) a well having channels formed therein and connected to one of said first and second bias voltage contacts based on a transistor characteristic of said SRAM device that bears on static noise margin (SNM) and write trip voltage Vtrip.

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