Semiconductor laser and light-sensing device using the same

Details Semiconductor laser and light-sensing device using the same Semiconductor laser and light-sensing device using the same

1995-02-28

1997-04-22

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 24, 372 49, H01S 319

Patent

active

056235097

ABSTRACT:
A semiconductor laser comprises AlGaAs-type semiconductor layers deposited on a substrate and a current constriction layer having at least one stripe-shaped current injection region. This semiconductor layers comprise: a first cladding layer of the first conductivity type, a first optical waveguide layer of the first conductivity type formed on the first cladding layer, an active layer formed on the first optical waveguide layer and having a quantum-well structure, a second optical waveguide layer of a second conductivity type formed on the active layer, a second cladding layer of the second conductivity type formed on the second optical waveguide layer, and a contact layer formed on the second cladding layer. The active layer has flatness of such a degree that roughness with respect to a reference surface within a unit area of 1 mm.times.1 mm is no more than .+-.0.1 .mu.m, the width of the current injection region of the current constriction layer is between 100 .mu.m to 250 .mu.m, and the resonator length is between 500 .mu.m to 1,000 .mu.m.

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