Method for fabricating semiconductor integrated circuit

Details Method for fabricating semiconductor integrated circuit Method for fabricating semiconductor integrated circuit

2005-02-08

2005-02-08

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S768000, C257S774000, C438S118000, C438S622000

Reexamination Certificate

active

06853081

ABSTRACT:
The semiconductor device is formed according to the following steps. A TiN film71and a W film72are deposited on a silicon oxide film64including the inside of a via-hole66by the CVD method and thereafter, the W film72and TiN film71on the silicon oxide film64are etched back to leave only the inside of the via-hole66and form a plug73. Then, a TiN film74, Al-alloy film75, and Ti film76are deposited on the silicon oxide film64including the surface of the plug73by the sputtering method and thereafter, the Ti film76, Al-alloy film75, and TiN film74are patterned to form second-layer wirings77and78.

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