Method for fabricating solid-state imaging device

Details Method for fabricating solid-state imaging device Method for fabricating solid-state imaging device

2005-08-09

2005-08-09

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S075000, C438S076000, C438S078000, C438S079000, C438S146000

Reexamination Certificate

active

06927091

ABSTRACT:
Disclosed is a method for fabricating a solid-state imaging device including a semiconductor substrate of a first conductivity type, a plurality of light-receiving sections provided at a distance in the surface region of the semiconductor substrate, and channel stop regions of a second conductivity type provided between the adjacent light-receiving sections in the surface region and in the internal region of the semiconductor substrate. The method includes the steps of forming a first photoresist layer having openings corresponding to positions at which the channel stop regions are formed; ion-implanting an impurity of a second conductivity type into the semiconductor substrate at a first energy through the first photoresist layer as a mask; forming a second photoresist layer having openings; and ion-implanting an impurity of a second conductivity type into the semiconductor substrate at a second energy through the second photoresist layer as a mask.

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