Programmable resistance memory element

Details Programmable resistance memory element Programmable resistance memory element

2005-12-06

2005-12-06

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000

Reexamination Certificate

active

06972428

ABSTRACT:
A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.

REFERENCES:
patent: 5854102 (1998-12-01), Gonzalez et al.
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6774387 (2004-08-01), Maimon

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