Method of providing a semiconductor package having an...

Details Method of providing a semiconductor package having an... Method of providing a semiconductor package having an...

2005-10-11

2005-10-11

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S115000, C438S121000, C438S125000, C257S682000, C257S721000

Reexamination Certificate

active

06953706

ABSTRACT:
Manufacturable processes and the resultant structures utilize metal hydride as an internal source of hydrogen to enhance heat removal within semiconductor packages that employ low dielectric constant materials. The use of a metal hydride heated by internal or external sources facilitates pressurizing hydrogen gas or hydrogen-helium gas mixtures within a hermetically-sealed package. The configuration of the metal hydride can include, where needed to generate the pressure required in larger packages, a relatively large area of metal hydride material on at least one or a plurality of hydrogen generation-dedicated chips. Alternatively, the configuration can include at least one or a plurality of relatively small “islands” of metal hydride material on each of at least one or a plurality of integrated circuit-bearing chips.

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“The New Low-K Candidate: It's a Gas,”Semiconductor International(Mar. 1999), p. 38.
“Thermal Conduction Module: A High-Performance Multilayer Ceramic Package,” A.J. Blodgett and D.R. Barbour,IBM Journal of Research and Development, vol. 26, No. 1(Jan. 1982), pp. 30-36.
“Future Packaging Trends: CSP vs. Flip Chip,” E. Jan Vardaman, 11thEuropean Microelectronics Conference—1997, pp. 299.

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