Semiconductor substrate, method of manufacturing the...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S029000, C438S046000

Reexamination Certificate

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06905898

ABSTRACT:
A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

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patent: 6417901 (2002-07-01), Okada et al.
patent: 6549552 (2003-04-01), Omi et al.
patent: 2000-12900 (2000-01-01), None
patent: 2000-22212 (2000-01-01), None
Richard C. Jaeger, “Introduction to Microelectronic Fabrication”, vol. 5, Addison Wesley Longman, Chapter 2, Lithography, pp. 13-26 (1993).

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