Nonvolatile semiconductor memory device capable of reducing...

Static information storage and retrieval – Floating gate – Disturbance control

Reexamination Certificate

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C365S185030, C365S185170

Reexamination Certificate

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06927998

ABSTRACT:
A semiconductor device with a non-volatile memory, having: first to fourth memory cells arranged in a first direction; a first bit line extending over the first memory cell in a second direction and connected to the second memory cell; a second bit line extending over the second memory cell in the second direction and connected to the first memory cell; a third bit line extending over the third memory cell in the second direction and connected to the third memory cell; and a fourth bit line extending over the fourth memory cell in the second direction and connected to the fourth memory cell.

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patent: 6021077 (2000-02-01), Nakaoka
patent: 6222756 (2001-04-01), Lee
patent: 6418052 (2002-07-01), Shibata et al.
patent: 6643179 (2003-11-01), Campardo et al.
patent: 6809961 (2004-10-01), Micheloni et al.
patent: 6839284 (2005-01-01), Yang et al.
patent: 4-276393 (1992-10-01), None

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