Method and apparatus for controlling wafer thickness...

Details Method and apparatus for controlling wafer thickness... Method and apparatus for controlling wafer thickness...

2005-02-01

2005-02-01

Fuller, Rodney (Department: 2851)

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

C356S630000

Reexamination Certificate

active

06850322

ABSTRACT:
A method and apparatus for controlling wafer thickness uniformity in a multi-zone vertical furnace is provided. The multi-zone furnace bakes a plurality of wafers within each zone for a first bake time. A film thickness of at least one wafer baked in each zone of the furnace is measured using a metrology tool. A film thickness optimization unit determines a deposition rate for the at least one wafer within each zone, with the deposition rate being determined as a function of the film thickness of the wafer and the first bake time. The film thickness optimization unit then determines a second bake time to bake a subsequent set of wafers, and the subsequent set of wafers is baked in the furnace for the second bake time.

REFERENCES:
patent: 5436172 (1995-07-01), Moslehi
patent: 6329643 (2001-12-01), Suzuki et al.
patent: 20030049372 (2003-03-01), Cook et al.

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