Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

2005-02-22

2005-02-22

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S096000, C438S097000, C438S166000, C438S365000, C438S482000, C438S486000

Reexamination Certificate

active

06858512

ABSTRACT:
An a-Si film (12) formed on an insulating substrate (10) is irradiated with a laser so that the a-Si film (12) is fused and recrystallized to form a p-Si film (13). Projections (100) generated on the p-Si film (13) at this stage are eliminated by irradiation of ion beams at the incident angle of 60° to 90° using an ion milling method to planarize the surface of the p-Si film (13), thereby creating sufficient insulation between the p-Si film (13) and gate electrodes (15).

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