Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-06-14

2005-06-14

Ghyka, Alexander (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S342000

Reexamination Certificate

active

06906345

ABSTRACT:
Disclosed is a semiconductor device having a reduced size, increased accuracy, and flattened element isolation regions with an decreased size. A plurality of MOSFETs having gate oxide films with different thicknesses and element isolation regions are formed by a manufacturing method employing oxygen implantation. An oxygen-ion implantation process and an annealing process are applied to a method of manufacturing the semiconductor device.

REFERENCES:
patent: 4419812 (1983-12-01), Topich
patent: 5712173 (1998-01-01), Liu et al.
patent: 5939754 (1999-08-01), Hoshi

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