Vertical bipolar transistor with recessed epitaxially grown intr

Details Vertical bipolar transistor with recessed epitaxially grown intr Vertical bipolar transistor with recessed epitaxially grown intr

1990-10-24

1992-08-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437162, 357 34, 357 35, H10L 21265

Patent

active

051378400

ABSTRACT:
A method of manufacturing a vertical bipolar transistor including the steps of: providing a semiconductor substrate including a first region of a first conductivity type; forming an extrinsic base region of a second conductivity type in the surface of the first region, the extrinsic base region generally bounding a portion of the first region; forming by ion implantation a linking region of the second conductivity type in the surface of the bounded portion of the first region so as to electrically link generally opposing edges of the extrinsic base region through the linking region; forming an insulating spacer over the junction between the extrinsic base region and the linking region so as to generally bound a portion of the linking region within the portion of the first region; etching the surface of the bounded portion of the linking region a short distance into the linking region; forming by epitaxial growth a first layer of semiconductor material of the second conductivity type on the etched surface of the bounded portion of the linking region; heating the semiconductor substrate to form an intrinsic base region at least partially within the first layer and to form an electrical connection between the intrinsic and extrinsic base regions through the linking region; and forming a second region of the first conductivity type in the surface of the intrinsic base region.

REFERENCES:
patent: 4157269 (1979-06-01), Ning et al.
patent: 4318751 (1982-03-01), Horng
patent: 4381953 (1983-05-01), Ho et al.
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4731341 (1988-03-01), Kawakatsu
patent: 4871684 (1989-10-01), Glang et al.
patent: 4879252 (1989-11-01), Komatsu
patent: 4980302 (1990-12-01), Shimizu
patent: 5008207 (1991-04-01), Blouse et al.
patent: 5024957 (1991-06-01), Harame et al.
Sugiyama, M. et al., "A 40GHz f.sub.T Si Bipolar Transistor LSI Technology," IEDM 89, pp. 221-224.
Meyerson, B., et al., "Low Temperature Silicon Epitaxy by Ultrahigh Vacuum/Chemical Vapor Deposition," Appl. Phys. Lett. 48 (12), Mar. 24, 1986, pp. 797-799.
IBM Technical Disclosure Bulletin, vol. 13, No. 10, Mar. 1971, "High-Speed Transistor" by K. G. Ashar.

Affiliated with

Also associated with

Rating

Vertical bipolar transistor with recessed epitaxially grown intr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical bipolar transistor with recessed epitaxially grown intr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical bipolar transistor with recessed epitaxially grown intr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-346107