Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-05-03
2005-05-03
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046012
Reexamination Certificate
active
06888866
ABSTRACT:
An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2film is formed on the entire surface. After a window is formed in a portion of the SiO2film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2film other than the device perimeter.
REFERENCES:
patent: 4282494 (1981-08-01), Yonezu et al.
patent: 4371966 (1983-02-01), Scifres et al.
patent: 5394421 (1995-02-01), Ikawa et al.
patent: 5960020 (1999-09-01), Nagai
patent: 6127691 (2000-10-01), Fukunaga et al.
patent: 6285695 (2001-09-01), Asano et al.
patent: 6396863 (2002-05-01), Fukunaga
patent: 6400743 (2002-06-01), Fukunaga et al.
patent: 6516016 (2003-02-01), Fukunaga et al.
patent: 6546033 (2003-04-01), Fukunaga
patent: 6580738 (2003-06-01), Fukunaga
patent: 03-222488 (1991-10-01), None
patent: 0 845 841 A2 (1998-06-01), None
patent: 0 920 096 (1999-06-01), None
patent: 63-038279 (1988-02-01), None
patent: 05-327112 (1993-12-01), None
patent: 09-298340 (1997-11-01), None
patent: 11-220224 (1999-08-01), None
patent: 11-354880 (1999-12-01), None
Horie et al. “Thermal Rollover Characteristics Up to 150 C of Buried-Stripe Type 980-nm Laser Diodes with a Current Injection Window Delinated by a SiN Layer”, IEEE Photonics Techonology Letters, vol. 12, No. 1. Jan 2000.*
Toshiaki Fukunaga et al. High-power 0.8 um InGaAs/InGaP/AIGaAs Single Quantum Well Lasers with Tensile-strained InGaP Barriers XP 001096289, Japanese Journal of Applied Physics. vol. 38, No. 4A. Apr. 1, 1999.*
Patent Abstracts of Japan, vol. 2000, No. 07, 2000101198, Apr. 7, 2000.
M. Sagawa et al. “Highly reliable operation of high-power 0.98-μm InGaAs/InGaAsP lasers with a window structure fabricated by Si implantation”, Semiconductor Laser Conference, 1998 IEEE 16thInternational Nara, Oct. 4, 1998.
S. Rusli et al. “1 W CW reliable λ=730nm aluminuim-free active layer diode laser”, Electronics Letters, vol. 36, No. 7, Mar. 30, 2004.
Toshiaki Fukunaga et al.. High-Power 0.8 μm InGaAsP/InGaP/AIGaAs Single Quantum Well Lasers with Tensile-Strained InGaP Barriers XP 001096289, Japanese Journal of Applied Physics, vol. 38, No. 4A, Apr. 1, 1999.
Fukunaga, et al “High-Power 0.8 μm InGaAsP/InGaP/A 1 GaAs Single Quantum Well :Lasers with Tensile-Strained InGaP Barriers” Jpn. J. Appl. Phys. vol.38 (1999) pp. L387-L389 Part 2, No. 4A, Apr. 1, 1999.
Horie, et al “Thermal Rollover Characteristics Up to 150° C of Buiried-Stripe Type 980-nm Laser Diodes with a Current Injection Window Delineated by a SiNχLayer” IEEE Photonics Technology Letters, vol. 12, No. 1 , Jan. 2000, pp. 13-15..
Fukunaga Toshiaki
Kuniyasu Toshiaki
Yamanaka Fusao
Fuji Photo Film Co. , Ltd.
Harvey Minsun Oh
Nguyen Tuan N.
Sughrue & Mion, PLLC
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