Active solid-state devices (e.g. – transistors – solid-state diode – Miscellaneous
Reexamination Certificate
2005-10-04
2005-10-04
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Miscellaneous
C257S009000, C257S014000, C257S029000, C257S030000, C438S409000
Reexamination Certificate
active
06952055
ABSTRACT:
The invention is a method of fabricating electrically passive components or optical elements on top or underneath of an integrated circuit by using a porous substrate that is locally filled with electrically conducting, light emitting, insulating or optically diffracting materials. The invention is directed to a method of fabricating electrically passive components like inductors, capacitors, interconnects and resistors or optical elements like light emitters, waveguides, optical switches of filters on top or underneath of an integrated circuit by using porous material layer that is locally filled with electrically conducting, light emitting, insulating or optically diffracting materials. In the illustrated embodiment the fabrication of voluminous, solenoid-type inductive elements in a porous insulating material by standard back- and front-side-lithography and contacting these two layers by electroplating micro-vias through the pores is described. By using a very dense interconnect spacing, an inter-pore capacitor structure is obtained between the metalized pores and the pore walls utilized as insulators.
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Doll Theodore
Fuenzalida Victor
Scherer Axel
California Institute of Technology
Dawes Daniel L.
Myers Dawes Andras & Sherman
Soward Ida M.
Zarabian Amir
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