Method for producing crystallographically textured...

Details Method for producing crystallographically textured... Method for producing crystallographically textured...

2005-02-08

2005-02-08

Nelms, David (Department: 2818)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C257S395000, C257S296000, C257S310000, C257S741000, C361S305000, C361S311000

Reexamination Certificate

active

06853535

ABSTRACT:
A bottom electrode structure and manufacturing method is described for producing crystallographically textured iridium electrodes for making textured PZT capacitors that enables enhanced ferroelectric memory performance. The use of seed layers originating from hexagonal crystal structures with {0001} texture provides a smooth surface for growth of {111} textured iridium, which exhibits the face-centered cubic (“FCC”) structure. This seeding technique results in {111} textured iridium with a small surface roughness relative to the film thickness. The highly textured iridium supports {111} textured PZT dielectric layer growth. Textured PZT exhibits enhanced switched polarization, reduced operating voltage and also improves the reliability of PZT capacitors used in FRAM® memory and other microelectronic devices.

REFERENCES:
patent: 5982034 (1999-11-01), Cava et al.
patent: 6248394 (2001-06-01), Du et al.
patent: 6518609 (2003-02-01), Ramesh
patent: 6728093 (2004-04-01), Fox
patent: 20030211741 (2003-11-01), Suzuki et al.

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